Samsung New Memory Roadmap: HBM5 Aims for 2x Performance, zHBM for 8x
At SEMICON Taiwan 2026, Samsung presented its updated memory roadmap focusing on HBM5 and zHBM. HBM5 targets twice the performance and 20% higher performance per watt over HBM4E, with a move to 2nm base die and 12/16/20-layer stacks, mass production expected around 2028. zHBM takes a radical approach by stacking memory directly on top of the processor, aiming for eight times raw performance and three times performance per watt of HBM4E, with thermal resistance reduced by 75-90%, launch after 2029. Samsung also confirmed HBM4E at 16 Gbps per pin and is currently shipping HBM4 at 11.7 Gbps.
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